Semiconductor device with through-mold via

ABSTRACT

In accordance with the present description, there is provided multiple embodiments of a semiconductor device. In each embodiment, the semiconductor device comprises a substrate having a conductive pattern formed thereon. In addition to the substrate, each embodiment of the semiconductor device includes at least one semiconductor die which is electrically connected to the substrate, both the semiconductor die and the substrate being at least partially covered by a package body of the semiconductor device. In certain embodiments of the semiconductor device, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In other embodiments, through mold vias are also included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. Other embodiments of the semiconductor device comprise one or more interposers which are electrically connected to the through-mold vias, and may be covered by the package body and/or disposed in spaced relation thereto. In yet other embodiments of the semiconductor device, the interposer may not be electrically connected to the through mold vias, but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of co-pending U.S. patentapplication Ser. No. 16/025,465 filed on Jul. 2, 2018, which is adivisional application of U.S. patent application Ser. No. 15/390,568filed on Dec. 26, 2016, which is a divisional application of U.S. patentapplication Ser. No. 12/348,813 filed on Jan. 5, 2009, both of which areexpressly incorporated by reference herein.

STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT

Not Applicable

BACKGROUND 1. Field of the Invention

The present invention relates generally to semiconductor devices, andmore particularly to a semiconductor device having a thin profile andoptimized electrical signal paths to provide enhanced electricalperformance.

2. Description of the Related Art

The variety of electronic devices utilizing semiconductor devices orpackages has grown dramatically in recent years. These electronicdevices include cellular phones, portable computers, etc. Each of theseelectronic devices typically includes a printed circuit board on which asignificant number of such semiconductor devices or packages are securedto provide multiple electronic functions. These electronic devices aretypically manufactured in reduced sizes and at reduced costs, whichresults in increased consumer demand. However, even though manysemiconductor devices have been miniaturized, space on a printed circuitboard remains limited and precious. Thus, there is a continuing need todevelop semiconductor device designs (e.g., semiconductor devices whichare of increasingly reduced thickness) to maximize the number ofsemiconductor devices that may be integrated into an electronic device,yet minimize the space needed to accommodate these semiconductordevices. The need also exists for new semiconductor device designs topossess increased functionality, despite the smaller size ofslimmer/thinner profiles thereof.

One method to minimize the space needed to accommodate semiconductordevices is to stack plural semiconductor dies in a single semiconductordevice which is itself fabricated to be of a reduced size. However,semiconductor devices including stacked plural semiconductor dies aretypically connected to an external circuit board through the use ofsolder balls or lands disposed solely on a lower external surfacethereof. In this regard, when the size of the semiconductor deviceitself is reduced, the available space for input/output terminals (e.g.,lands) is restricted. As a result, when the size of the semiconductordevice is reduced, it is often difficult to realize various functionsthereof due the insufficient availability of input/output terminals.Stated another way, when plural semiconductor dies are stacked in asingle semiconductor device, the need arises for an increased number ofinput/output terminals for inputting/outputting electrical signals toeach semiconductor die, though the smaller size of the semiconductordevice creates limits in the available space for increasing the numberof input/output terminals. Thus, the problem that arises is that isoften difficult to form the input/output terminals when the size of thesemiconductor device is reduced. When the input/output terminals areformed using solder balls, this particular problem becomes even moresevere due to the volume of solder balls.

In an effort to address the aforementioned problems, there has beendeveloped POP (package on package) technology to stack a semiconductordevice on another semiconductor device, and PIP (package in package)technology to install a semiconductor device in another semiconductordevice. A typical PIP semiconductor device comprises variouscombinations of electronic components including passive devices,semiconductor dies, semiconductor packages, and/or other elements whichare arranged in a horizontal direction, or stacked in a verticaldirection on an underlying substrate. In many PIP devices, the substrateand the electronic components are interconnected to one another throughthe use of conductive wires alone or in combination with conductivebumps, with such electronic components thereafter being encapsulated bya suitable encapsulant material which hardens into a package body of thePIP device. However, the drawbacks of both POP and PIP technology isthat it is difficult to secure and stack the input/output terminalsthrough the use of either technology as a result of the input/outputterminals of the semiconductor device typically being formed only on onesurface (e.g., the lower surface) thereof. The present inventionaddresses these and other shortcomings of prior art POP and PIP devices,as will be described in more detail below.

BRIEF SUMMARY

In accordance with the present invention, there is provided multipleembodiments of a semiconductor device. In each embodiment, thesemiconductor device comprises a substrate having a conductive patternformed thereon. In addition to the substrate, each embodiment of thesemiconductor device includes at least one semiconductor die which iselectrically connected to the substrate, both the semiconductor die andthe substrate being at least partially covered by a package body of thesemiconductor device. In certain embodiments of the semiconductordevice, through-mold vias are formed in the package body to provideelectrical signal paths from an exterior surface thereof to theconductive pattern of the substrate. In other embodiments, through moldvias are also included in the package body to provide electrical signalpaths between the semiconductor die and an exterior surface of thepackage body. Other embodiments of the semiconductor device comprise oneor more interposers which are electrically connected to the through-moldvias, and may be covered by the package body and/or disposed in spacedrelation thereto. In yet other embodiments of the semiconductor device,the interposer may not be electrically connected to the through moldvias, but may have one or more semiconductor dies of the semiconductordevice electrically connected thereto.

The present invention is best understood by reference to the followingdetailed description when read in conjunction with the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

These, as well as other features of the present invention, will becomemore apparent upon reference to the drawings wherein:

FIG. 1 is a cross-sectional view of a semiconductor device constructedin accordance with a first embodiment of the present invention;

FIG. 2 is a cross-sectional view of a semiconductor device constructedin accordance with a second embodiment of the present invention;

FIG. 3 is a cross-sectional view of a semiconductor device constructedin accordance with a third embodiment of the present invention;

FIG. 4 is a cross-sectional view of a semiconductor device constructedin accordance with a fourth embodiment of the present invention;

FIG. 5 is a cross-sectional view of a semiconductor device constructedin accordance with a fifth embodiment of the present invention;

FIG. 6 is a cross-sectional view of a semiconductor device constructedin accordance with a sixth embodiment of the present invention;

FIG. 7 is a cross-sectional view of a semiconductor device constructedin accordance with a seventh embodiment of the present invention;

FIG. 8 is a cross-sectional view of a semiconductor device constructedin accordance with an eighth embodiment of the present invention;

FIG. 9 is a cross-sectional view of a semiconductor device constructedin accordance with a ninth embodiment of the present invention;

FIG. 10 is a flow chart illustrating an exemplary fabrication method forthe semiconductor device shown in FIG. 1 ;

FIGS. 11A, 11B, 11C, 11D, 11E, 11F, 11G, and 11H are views illustratingan exemplary fabrication method for the semiconductor package shown inFIG. 1 ;

FIG. 12 is a flow chart illustrating an exemplary fabrication method forthe semiconductor device shown in FIG. 6 ; and

FIGS. 13A, 13B, 13C, 13D, 13E, 13F, 13G, and 13H are views illustratingan exemplary fabrication method for the semiconductor package shown inFIG. 6 .

Common reference numerals are used throughout the drawings and detaileddescription to indicate like elements.

DETAILED DESCRIPTION OF THE DRAWINGS

Referring now to the drawings wherein the showings are for purposes ofillustrating various embodiments of the present invention and not forpurposes of limiting the same, FIG. 1 depicts in cross-section asemiconductor device 100 constructed in accordance with a firstembodiment of the present invention. The semiconductor device 100comprises a substrate 110 which preferably has a generally quadrangularconfiguration. The substrate 110 can be selected from common circuitboards (e.g., rigid circuit boards and flexible circuit boards) andequivalents thereof. In this regard, the present invention is notintended to be limited to any particular type of substrate 110. By wayof example and not by way of limitation, the substrate 110 may includean insulating layer 114 having opposed, generally planar top and bottomsurfaces. Disposed on the top surface is an electrically conductivepattern 112, while disposed on the bottom surface are conductive lands113. The conductive pattern 112 and lands 113 are electricallyinterconnected to each other in a prescribed pattern or arrangementthrough the use of conductive vias 111 which extend through theinsulation layer 114 in a direction generally perpendicularly betweenthe top and bottom surfaces thereof. A solder mask 115 is preferablycoated on at least portions of the lands 113 and the bottom surface ofthe insulating layer 114. The solder mask 115 is used to protectportions of the lands 113 which would otherwise be exposed to theambient environment.

The semiconductor device 100 further comprises a semiconductor die 120which is electrically connected to the substrate 110, and in particularto the conductive pattern 112 thereof. The semiconductor die 120 definesopposed, generally planar top and bottom surfaces, and includes aplurality of terminals or bond pads 121 disposed on the top surfacethereof. In FIG. 1 , each of the bond pads 121 is depicted as projectingupwardly from the generally planar top surface of the semiconductor die120. However, those of ordinary skill in the art will recognize thateach of the bond pads 121 may be partially embedded within thesemiconductor 120 so as to extend in substantially flush relation to thetop surface thereof. The semiconductor die 120 further includes aplurality of through electrodes 122 formed therein and passing betweenthe top and bottom surfaces thereof. As seen in FIG. 1 , one end (thetop end as viewed from the perspective shown in FIG. 1 ) of eachelectrode 122 is electrically coupled to a respective one of the bondpads 121, with the remaining end (the bottom end as viewed from theperspective shown in FIG. 1 ) extending to the bottom surface of thesemiconductor die 120.

As further seen in FIG. 1 , each of the electrodes 122 is electricallyconnected to the conductive pattern 112 of the substrate 110 through theuse of respective ones of a plurality of conductive bumps 130. Examplesof suitable material for the conductive bumps 130 include, but are notlimited to, gold, silver, copper, soldering materials or equivalentsthereto. As will be recognized by those of ordinary skill in the art,the conductive bumps 130, which are formed between the semiconductor die120 and the substrate 110, effectively transmit electrical signalsbetween the semiconductor die 120 and the substrate 110. Though notshown, it is contemplated that an underfill material may be disposedbetween the bottom surface of the semiconductor die 120 and the topsurface of the insulating layer 114, the underfill material alsocovering portions of the conductive pattern 112 and the conductive bumps130. The underfill material, if included, would serve to protect thesemiconductor die 120 by absorbing stress according to differencesbetween the thermal expansion coefficients of the substrate 110 and thesemiconductor die 120. It is contemplated that the semiconductor die 120may comprise a circuit that includes transistors, resistors andcapacitors integrated on a silicon substrate.

The semiconductor device 100 further comprises a plurality of solderballs 160 which are electrically connected to the respective ones of thelands 113 of the substrate 110 in a prescribed pattern or arrangement.As seen in FIG. 1 , the solder mask 115 extends into contact with thesolder balls 160. Examples of suitable materials for the solder balls160 include, but are not limited to, eutectic solders (e.g., Sn37Pb),high-lead solders (e.g., Sn95Pb) having a high melting point, lead-freesolders (e.g., SnAg, SnCu, SnZn, SnZnBi, SnAgCu and SnAgBi), orequivalents thereto. As will be recognized, the solder balls 160 areused to electrically couple the substrate 110, and hence thesemiconductor die 120, to an external circuit.

In the semiconductor device 100, at least portions of the semiconductordie 120, the conductive bumps 130, the top surface of the insulatinglayer 114, and the conductive pattern 112 are each encapsulated orcovered by an encapsulant material which ultimately hardens into apackage body 140 of the semiconductor device 100. The present inventionis not intended to be limited to any specific material which could beused to facilitate the fabrication of the package body 140. For example,and not by way of limitation, the package body 140 can be formed fromepoxy molding compounds or equivalents thereto. The fully formed packagebody 140 preferably includes a generally planar top surface, andgenerally planar side surfaces which extend in generally flush orco-planar relation to respective side surfaces of the insulating layer114 of the substrate 110.

In the semiconductor device 100, the package body 140 includes aplurality of through-mold vias 150 formed therein. Each through-mold via(TMV) 150 extends from the top surface of the package body 140 to arespective one of the bond pads 121 disposed on the top surface of thesemiconductor die 120. Each TMV 150 is preferably formed by creating ahole in the package body 140 using a laser or an etching solution, andfilling such hole with a conductive material selected from copper,aluminum, gold, silver, tin, lead, bismuth, soldering materials orequivalents thereto. In this regard, it is contemplated that thefabrication of each TMV 150 may be facilitated by the completion of areflow process subsequent to placing a ball fabricated from one of theaforementioned materials on top of the hole formed in the package body140 through the use of one of the aforementioned processes.

As seen in FIG. 1 , each TMV 150 has a generally conical configuration.More particularly, each TMV 150 is of a first diameter at a respectiveone of the bond pads 121, and a second diameter at the top surface ofthe package body 140, the second diameter exceeding the first diameter.As such, each TMV 150 defines a continuous side wall which is inclinedat a predetermined angle relative to the top surface of the package body140. As will be recognized by those of ordinary skill in the art, eachTMV 150 creates an electrically conductive path from the semiconductordie 120 to the top surface of the package body 140, whereas theconductive bumps 130, substrate 110 and solder balls 160 collectivelydefine an electrically conductive path which extends from thesemiconductor die 120 in an opposite direction, such as toward anunderlying substrate to which the semiconductor device 110 mayultimately be electrically connected through the use of the solder balls160. Those of ordinary skill in the art will recognize that each TMV 150may have a shape or configuration differing from that shown in FIG. 1without departing from the spirit and scope of the present invention.

Due to the inclusion of the TMV's 150 therein, the semiconductor device100 is particularly suited for having another semiconductor devicestacked thereon and electrically connected thereto. In this regard, thelands or solder balls of a second semiconductor device can beelectrically coupled to respective ones of the TMV's 150 exposed in thetop surface of the package body 140. Along these lines, it iscontemplated that the end of each TMV 150 extending to the top surfaceof the package body 140 have a generally concave configuration topartially accommodate the solder balls of a conventional BGA (Ball GridArray) semiconductor device which may be stacked upon the semiconductordevice 100, thus reducing the overall height or profile of the stack.Another semiconductor device suitable for stacking upon thesemiconductor device 100 is an LGA (Land Grid Array) device, the stackcomprising the semiconductor device 100 and the LGA device also being ofcomparatively reduced thickness due to the use of the TMV's 150 tofacilitate the electrical interconnection therebetween.

Referring now to FIG. 10 , there is provided a flow chart which setsforth an exemplary method for fabricating the semiconductor device 100of the present invention shown in FIG. 1 . The method comprises thesteps of preparing the substrate (S1), preparing the semiconductor die(S2), forming conductive bumps on the semiconductor die (S3), attachingand electrically connecting the semiconductor die to the substrate (S4),encapsulation to form a package body (S5), forming TMV's in the packagebody (S6), and the connection of solder balls to the substrate (S7).FIGS. 11A-11H provide illustrations corresponding to these particularsteps, as will be discussed in more detail below.

Referring now to FIG. 11A, in the initial step S1 of the fabricationprocess for the semiconductor device 100, the substrate 110 having theabove-described structural attributes is provided. As indicated above, asolder mask 115 may be coated on at least portions of the lands 113 andthe bottom surface of the insulating layer 114.

In the next step S2 of the fabrication process for the semiconductordevice 100, the semiconductor die 120 is prepared. More particularly, asshown in FIG. 11B, the semiconductor die 120 is formed to include theaforementioned bond pads 121 on the top surface thereof, and thethrough-electrodes 122 which pass through the semiconductor die 120between the top and bottom surfaces thereof, the electrodes 122 beingelectrically coupled to respective ones of the bond pads 121 asindicated above. Thereafter, as illustrated in FIG. 11C, step S3 iscompleted wherein the conductive bumps 130 are electrically connected tothose ends of the through electrodes 122 opposite those endselectrically coupled to the bond pads 121. Thus, the electrodes 122effectively electrically couple the bond pads 121 to respective ones ofthe conductive bumps 130.

Referring now to FIG. 11D, in the next step S4 of the fabricationprocess for the semiconductor device 100, the semiconductor die 120 iselectrically connected to the substrate 110. More particularly, theconductive bumps 130 electrically connected to the semiconductor die 120as described above in relation to step S3 are each electricallyconnected to the conductive pattern 112 of the substrate 110. As alsoindicated above, an underfill material may be interposed between thesemiconductor die 120 and the substrate 110, such underfill materialthus covering or encapsulating at least portions of the conductive bumps130.

Referring now to FIG. 11E, in the next step S5 of the fabricationprocess for the semiconductor device 100, at least portions of thesemiconductor die 120, the conductive bumps 130, the conductive pattern112 and the top surface of the insulating layer 114 are eachencapsulated or covered by an encapsulant material which ultimatelyhardens into the package body 140 of the semiconductor device 100. Asindicated above, the fully formed package body 140 preferably includes agenerally planar top surface, and generally planar side surfaces whichextend in generally flush or co-planar relation to respective sidesurfaces of the insulating layer 114 of the substrate 110. Theencapsulation step S5 can be carried out by transfer molding using amold or dispensing molding using a dispenser.

In the next step S6 of the fabrication process for the semiconductordevice 100, the TMV's 150 are formed in the package body 140. Moreparticularly, the formation of the TMV's 150 comprises the initial stepof forming vias or holes 140 a in the package body 140 as shown in FIG.11F. Each of the holes 140 a extends from the top surface of the packagebody 140 to a respective one of the bond pads 121. As indicated above,the holes 140 a may be formed through the use of a laser drilling orchemical etching process. After being formed in the package body 140 inthe aforementioned manner, each of the holes 140 a is filled with aconductive metal material as shown in FIG. 11G, thus completing theformation of the TMV's 150. As also indicated above, the filling of eachhole 140 a with the metal material may be accomplished through thecompletion of a reflow process subsequent to the placement of a ballfabricated from a suitable conductive metal material upon that end ofeach hole 140 extending to the top surface of the package body 140.

Referring now to FIG. 11H, in the next step S7 of the fabricationprocess for the semiconductor device 100, the solder balls 160 areelectrically connected to respective ones of the lands 113 of thesubstrate 110. As seen in FIG. 11H, the solder mask 115 may extend intocontact with the solder balls 160. The solder balls 160 may befabricated from the materials described above in relation thereto.

Referring now to FIG. 2 , there is shown a semiconductor device 200constructed in accordance with a second embodiment of the presentinvention. The semiconductor device 200 is substantially similar to theabove-described semiconductor device 100, with only the differencesbetween the semiconductor devices 200, 100 being described below.

The sole distinction between the semiconductor devices 100, 200 lies inthe addition of through-mold vias (TMV's) 250 to the package body 140 ofthe semiconductor device 200. As seen in FIG. 2 , each of the TMV's 250extends from the top surface of the package body 140 to a correspondingportion of the conductive pattern 112 of the substrate 110. Each TMV 250is preferably fabricated using the same process described above inrelation to each TMV 150. Advantageously, in the semiconductor device200, the inclusion of the TMV's 250 increases the available number ofinput/output terminals of the semiconductor device 200 in comparison tothe semiconductor device 100.

Referring now to FIG. 3 , there is shown a semiconductor device 300constructed in accordance with a third embodiment of the presentinvention. The semiconductor device 300 comprises the above-describedsubstrate 110. In addition to the substrate 110, the semiconductordevice 300 comprises a first (upper) semiconductor die 320 which isattached to the top surface of the insulating layer 114 of the substrate110 (as viewed from the perspective shown in FIG. 3 ) through the use ofan adhesive layer 323. The first semiconductor die 320 defines opposed,generally planar top and bottom surfaces, and includes a plurality ofterminals or bond pads 321 disposed on the top surface thereof. In thisregard, the bottom surface of the first semiconductor die 320 is thatsurface which is attached to the substrate 110 through the use of theadhesive layer 323. In the semiconductor device 300, the bond pads 321of the first semiconductor die 320 are electrically connected to theconductive pattern 112 of the substrate 110 through the use of aplurality of conductive wires 330. Each conductive wire 330 may beformed by the completion of a normal wire bonding method, that is, byforming a ball bond at the corresponding bond pad 321 of the firstsemiconductor die 320, and then forming a stitch bonding region at aprescribed portion of the conductive pattern 112 of the substrate 110.Alternatively, each conductive wire 330 may be formed by a reverse loopwire bonding method, that is, by forming a ball bond at thecorresponding bond pad 321 and corresponding portion of the conductivepattern 112, and then connecting such ball bonds to each other.

In addition to the first semiconductor die 320, the semiconductor device300 includes a second (lower) semiconductor die 325 which is alsoelectrically connected to the substrate 110, and in particular the lands113 thereof. Like the first semiconductor die 320, the secondsemiconductor die 325 defines opposed, generally planar top and bottomsurfaces, and includes a plurality of bond pads 326 on that surfacewhich defines the top surface as viewed from the perspective shown inFIG. 3 . In this regard, each of the bond pads 326 of the secondsemiconductor die 325 is electrically connected to a respective one ofthe lands 113 through the use of respective ones of a plurality ofconductive bumps 331. The conductive bumps 331 are each preferablyfabricated from the same material described above in relation to theconductive bumps 130 of the semiconductor device 100.

In the semiconductor device 300, at least portions of the first andsecond semiconductor dies 320, 325, the conductive wires 330, theconductive bumps 331, the top and bottom surfaces of the insulatinglayer 114, the conductive pattern 112, and the lands 113 are eachencapsulated or covered by an encapsulant material which ultimatelyhardens into a package body 340 of the semiconductor device 300. Thepackage body 340 may be fabricated from the same material describedabove in relation to the package body 140 of the semiconductor device100. As seen in FIG. 3 , the fully formed package body 340 preferablyincludes a generally planar top surface when viewed from the perspectiveshown in FIG. 3 , a generally planar bottom surface when viewed from thesame perspective, and generally planar side surfaces which extendgenerally perpendicularly between the top and bottom surfaces ingenerally flush or co-planar relation to respective side surfaces of theinsulating layer 114 of the substrate 110.

In the semiconductor device 300, the package body 340 includes aplurality of through-mold vias (TMV's) 350 disposed therein. As seen inFIG. 3 , certain ones of the TMV's 350 extend from the top surface ofthe package body 340 to a corresponding portion of the conductivepattern 112 of the substrate 110. The remaining TMV's 350 extend fromthe bottom surface of the package body 340 to respective ones of thelands 113 of the substrate 110. Each TMV 350 is identically configuredto the above-described TMV's 250 of the semiconductor device 200, and ispreferably fabricated using the same process described above in relationto each TMV 150 of the semiconductor device 100. Along these lines, itis contemplated that the end of each TMV 350 extending to the topsurface and/or the bottom surface of the package body 340 may have agenerally concave configuration to partially accommodate solder balls ofa conventional BGA semiconductor device which may be stacked on the topsurface and/or the bottom surface of the semiconductor device 300. Inthis regard, the inclusion of the TMV's 350 in the semiconductor device300 makes the semiconductor device 300 particularly suited for havingone or more additional semiconductor devices stacked on the top and/orbottom surfaces thereof.

Referring now to FIG. 4 , there is shown a semiconductor device 400constructed in accordance with a fourth embodiment of the presentinvention. The semiconductor device 400 comprises the above-describedsubstrate 110. Additionally, in the semiconductor device 400, theabove-described solder balls 160 are formed on and electricallyconnected to respective ones of the lands 113 of the substrate 110.Further, the above-described solder mask 115 is preferably applied tothe bottom surface of the insulating layer 114 of the substrate 110, thesolder mask 115 being coated on at least portions of the lands 113 andextending into contact with portions of each of the solder balls 160.

In addition to the substrate 110, the semiconductor device 400 comprisesa first (lower) semiconductor die 320 which is electrically connected tothe conductive pattern 112 of the substrate 110. More particularly, thefirst semiconductor die 420 defines opposed, generally planar top andbottom surfaces, and includes a plurality of terminals or bond pads 421disposed on the bottom surface thereof. Each of the bond pads 421 iselectrically connected to the conductive pattern 112 through the use ofa respective one of a plurality of conductive bumps 430. The conductivebumps 430 are each preferably fabricated from the same materialdescribed above in relation to the conductive bumps 130 of thesemiconductor device 100.

The semiconductor device 400 further comprises an interposer 423 whichis attached to the top surface of the first semiconductor die 420through the use of an adhesive layer 415. The interposer 423 includes aninterposer body 424 having a first conductive pattern 423 a formedwithin the top surface thereof, a second conductive pattern 423 b formedtherein, and a third conductive pattern 423 c which is also formedtherein and electrically connects the first and second conductivepatterns 423 a, 423 b to each other. That surface of the body 424disposed furthest from the first conductive pattern 423 a is secured tothe top surface of the first semiconductor die 420 through the use ofthe aforementioned adhesive layer 413. As seen in FIG. 4 , the first andsecond conductive patterns 423 a, 423 b are formed within the body 424of the interposer 423 so as to extend along respective ones of a spaced,generally parallel pair of planes. On the other hand, the thirdconductive pattern 423 c is formed in a direction which extendsgenerally perpendicularly between the planes along which respective onesof the first and second patterns 423 a, 423 b extend.

The semiconductor device 400 further comprises a second (upper)semiconductor die 425 which is electrically connected to the interposer423, and in particular to the first conductive pattern 423 a formed onthe body 424 thereof. Like the first semiconductor die 420, the secondsemiconductor die 425 defines opposed, generally planar top and bottomsurfaces. Disposed on the bottom surface of the first semiconductor die425 is a plurality of conductive terminals or bond pads 426. The bondpads 426 are each electrically connected to the first conductive pattern423 a through the use of respective ones of a plurality of conductivebumps 431 which are each preferably fabricated from the same materialused in relation to the conductive bumps 430. As seen in FIG. 4 , thesecond and third conductive patterns 423 b, 423 c of the interposer 423are configured to effectively route signals between a portion of thefirst conductive pattern 423 a to which the second semiconductor die 425is electrically connected to another portion of the first conductivepattern 423 a which is located outwardly beyond the lateral sidesurfaces of the second semiconductor die 425. In this regard, when theinterposer 423 is captured between the first and second semiconductordies 420, 425 in the manner shown in FIG. 4 , a peripheral portion ofthe interposer 423 protrudes beyond the lateral side surfaces of each ofthe first and second semiconductor dies 420, 425. Additionally, aportion of the first conductive pattern 423 a is exposed in the body 424of such peripheral portion of the interposer 423.

In the semiconductor device 400, the interposer 423 (and hence thesecond semiconductor die 425) is electrically connected to theconductive pattern 112 of the substrate 110 through the use of one ormore electrically conductive wires 432. More particularly, one end ofeach conductive wire 432 extends and is electrically connected to aportion of the first conductive pattern 423 a which is exposed in theperipheral portion of the substrate 423, and in particular the body 424thereof. The remaining, opposite end of the conductive wire 432 iselectrically connected to a prescribed portion of the conductive pattern112 of the substrate 110. Thus, the second semiconductor die 425 iscapable of receiving electrical signals from and outputting electricalsignals to an external circuit via the interposer 423, conductivewire(s) 432, and substrate 110.

In the semiconductor device 400, at least portions of the first andsecond semiconductor dies 420, 425, the conductive bumps 430, 431, theinterposer 423, the conductive wires 432, the insulating layer 114 ofthe substrate 110, and the conductive pattern 112 are each encapsulatedor covered by an encapsulant material which ultimately hardens into apackage body 440 of the semiconductor device 100. The package body 440may be fabricated from the same materials described above in relation tothe package body 140 of the semiconductor device 100. The fully formedpackage body 440 preferably includes a generally planar top surface, andgenerally planar side surfaces which extend in generally flush orco-planar relation to respective side surfaces of the insulating layer114 of the substrate 110.

In the semiconductor device 400, the package body 440 preferablyincludes a plurality of through-mold vias (TMV's) 450 formed therein. Asseen in FIG. 4 , each of the TMV's 450 extends from the top surface ofthe package body 440 to a corresponding portion of the conductivepattern 112 of the substrate 110. Each TMV 450 is identically configuredto the above-described TMV's 250, 350, and is preferably fabricatedusing the same process described above in relation to each TMV 150.

Referring now to FIG. 5 , there is shown a semiconductor device 500constructed in accordance with a fifth embodiment of the presentinvention. The semiconductor device 500 comprises the above-describedsubstrate 110. Additionally, in the semiconductor device 500, theabove-described solder balls 160 are formed on and electricallyconnected to respective ones of the lands 113 of the substrate 110.Further, the above-described solder mask 115 is preferably applied tothe bottom surface of the insulating layer 114 of the substrate 110, thesolder mask 115 being coated on at least portions of the lands 113 andextending into contact with portions of each of the solder balls 160.The semiconductor device 500 also includes a first semiconductor die 120which is identical to the above-described semiconductor 120 of thesemiconductor device 100, and is electrically connected to theconductive pattern 112 of the substrate 110 through the use of theconductive bumps 130 in the same manner described above in relation tothe semiconductor device 100. In addition to the first semiconductor die120, also electrically connected to the conductive pattern 112 of thesubstrate 110 is a plurality of conductive balls 551. As seen in FIG. 5, the conductive balls 551 are electrically connected to a peripheralportion of the conductive pattern 112. Each of the conductive balls 551is preferably fabricated from a conductive material selected fromcopper, aluminum, gold, silver, tin, lead, bismuth, soldering materialsor equivalents thereto.

The semiconductor device 500 further comprises an interposer 523 whichis disposed on the top surface of the first semiconductor die 420 andelectrically connected to the first semiconductor die 120. Theinterposer 523 includes an interposer body 524 having a first conductivepattern 523 a formed within the top surface thereof, a second conductivepattern 523 b formed therein, and a third conductive pattern 523 c whichis also formed therein and electrically connects the first and secondconductive patterns 523 a, 523 b to each other. As seen in FIG. 5 , thefirst and second conductive patterns 523 a, 523 b are formed within thebody 524 of the interposer 523 so as to extend along respective ones ofa spaced, generally parallel pair of planes. On the other hand, thethird conductive pattern 523 c is formed in a direction which extendsgenerally perpendicularly between the planes along which respective onesof the first and second conductive patterns 523 a, 523 b extend. In thesemiconductor device 500, the second conductive pattern 523 b of theinterposer 523 is electrically connected to the bond pads 121 of thefirst semiconductor die 121. As is also seen in FIG. 5 , the interposer523 is sized relative to the first semiconductor die 120 such that theside surfaces of the body 524 extend in substantially co-planar relationto respective side surfaces of the first semiconductor die 120.

The semiconductor device 500 further comprises the second (upper)semiconductor die 425 described above in relation to the semiconductordevice 400. In this regard, the second semiconductor die 425 iselectrically connected to the interposer 523, and in particular to thefirst conductive pattern 523 a formed on the body 524 thereof. The bondpads 426 of the second semiconductor die 425 are each electricallyconnected to the first conductive pattern 523 a through the use ofrespective ones of the aforementioned conductive bumps 431. As seen inFIG. 5 , the side surfaces of the body 524 of the interposer 523 alsoextend in substantially co-planar to respective side surfaces of thesecond semiconductor die 425. Thus, when the interposer 523 is capturedbetween the first and second semiconductor dies 120, 425 in the mannershown in FIG. 5 , the side surfaces of the body 524 of the interposer523 extend in generally co-planar relation to respective ones of thelateral side surfaces of each of the first and second semiconductor dies120, 425.

In the semiconductor device 500, at least portions of the first andsecond semiconductor dies 120, 425, the conductive bumps 130, 431, theinterposer 523, the conductive balls 551, the insulating layer 114 ofthe substrate 110, and the conductive pattern 112 are each encapsulatedor covered by an encapsulant material which ultimately hardens into apackage body 540 of the semiconductor device 500. The package body 540may be fabricated from the same materials described above in relation tothe package body 140 of the semiconductor device 100. The fully formedpackage body 540 preferably includes a generally planar top surface, andgenerally planar side surfaces which extend in generally flush orco-planar relation to respective side surfaces of the insulating layer114 of the substrate 110.

In the semiconductor device 500, the package body 140 preferablyincludes a plurality of through-mold vias (TMV's) 550 formed therein.Each TMV 550 includes a first region which is defined by a respectiveone of the conductive balls 551 electrically connected to the conductivepattern 112 of the substrate 110. In addition to the first region, eachTMV 550 includes a second region 552 which extends from the top surfaceof the package body 140 to a respective one of the conductive balls 551.The second region 552 of each TMV 550 is identically configured to theabove-described TMV's 250, 350, 450, and is preferably fabricated usingthe same process described above in relation to each TMV 150. In thisregard, the second region 552 of each TMV 550 is defined by ametal-filled hole which is formed in the package body 540 to extend fromthe top surface thereof to a corresponding conductive ball 551 (i.e.,the first region of the same TMV 550). Thus, each TMV 550 (comprisingthe second region 552 and the first region or conductive ball 551)extends from the top surface of the package body 540 to (and inelectrical communication with) the conductive pattern 112. Since thesecond regions 552 of the TMV's 550 extend to respective ones of theconductive balls 551 rather than to the conductive pattern 112, eachsecond region 552 is of a shorter height in comparison to the TMV's 450included in the semiconductor device 400, though being fabricated in thesame manner as indicated above. Due to the shortened height of height ofthe second regions 552 of the TMV's 550, including the holes used toform the same, potential adverse effects on the first and secondsemiconductor dies 120, 425 attributable to the formation of the holesis reduced, thus improving the reliability of the semiconductor device500.

Referring now to FIG. 6 , there is shown a semiconductor device 600constructed in accordance with a sixth embodiment of the presentinvention. The semiconductor device 600 comprises the above-describedsubstrate 110. Additionally, in the semiconductor device 600, theabove-described solder balls 160 are formed on and electricallyconnected to respective ones of the lands 113 of the substrate 110.Further, the above-described solder mask 115 is preferably applied tothe bottom surface of the insulating layer 114 of the substrate 110, thesolder mask 115 being coated on at least portions of the lands 113 andextending into contact with portions of each of the solder balls 160.The semiconductor device 600 also includes a semiconductor die 420 whichis identical to the above-described semiconductor 420 of thesemiconductor device 400, and is electrically connected to theconductive pattern 112 of the substrate 110 through the use of theconductive bumps 430 in the same manner described above in relation tothe semiconductor device 400.

In the semiconductor device 600, at least portions of the semiconductordie 420, the conductive bumps 430, the insulating layer 114 of thesubstrate 110, and the conductive pattern 112 are each encapsulated orcovered by an encapsulant material which ultimately hardens into apackage body 640 of the semiconductor device 600. The package body 640may be fabricated from the same materials described above in relation tothe package body 140 of the semiconductor device 100. The fully formedpackage body 640 preferably includes a generally planar top surface, andgenerally planar side surfaces which extend in generally flush orco-planar relation to respective side surfaces of the insulating layer114 of the substrate 110. The generally planar top surface of thesemiconductor die 420 is preferably exposed in and substantially flushwith the top surface of the package body 640.

In the semiconductor device 600, the package body 640 preferablyincludes a plurality of through-mold vias (TMV's) 650 formed therein.Each TMV 650 preferably comprises a conductive ball which iselectrically connected to a peripheral portion of the conductive pattern112. The conductive balls used to define the TMV's 650 are preferablyfabricated from a conductive material selected from copper, aluminum,gold, silver, tin, lead, bismuth, soldering materials or equivalentsthereto. Importantly, in the semiconductor device 600, the package body640 is formed in a manner wherein portions of the conductive balls usedto form the TMV's 650 protrude from the top surface of the package body640 in the manner shown in FIG. 6 . Thus, the height of each TMV 650slightly exceeds the height or thickness of the package body 640. It isalso contemplated that the package body 640 may be fabricated byattaching a mold film to the substrate 110, such mold film partiallycovering the semiconductor die 420 and TMV's 650 in the aforementionedmanner.

The semiconductor device 600 further comprises an interposer 623 whichis disposed on and electrically connected to the TMV's 650. Theinterposer 623 includes an interposer body 624 having a first conductivepattern 623 a formed within the top surface thereof, a second conductivepattern 623 b formed therein, and a third conductive pattern 623 c whichis also formed therein and electrically connects the first and secondconductive patterns 623 a, 623 b to each other. As seen in FIG. 6 , thefirst and second conductive patterns 623 a, 623 b are formed within thebody 624 of the interposer 623 so as to extend along respective ones ofa spaced, generally parallel pair of planes. On the other hand, thethird conductive pattern 623 c is formed in a direction which extendsgenerally perpendicularly between the planes along which respective onesof the first and second conductive patterns 623 a, 623 b extend. In thesemiconductor device 600, the second conductive pattern 623 b of theinterposer 623 is electrically connected to the exposed portions of theTMV's 650 in the manner shown in FIG. 6 . Due to those portions of theTMV's 650 to which the interposer 623 is electrically connectedprotruding above the top surface of the package body 640, a narrow spaceor gap 615 is defined between the top surface of the package body 640(as well as the top surface of the semiconductor die 420) and theinterposer 623 (i.e., the bottom surface of the body 624). The formationof the gap 615 between the package body 640 and the interposer 623enhances the ability of the semiconductor die 420 to dissipate heatoutside of the semiconductor device 600. Advantageously, the inclusionof the interposer 623 in the semiconductor device 600 allows a wiringpattern of the TMV's 650 to be selectively redistributed using theinterposer 623. As is also seen in FIG. 6 , the interposer 623 is sizedrelative to the package body 640 such that the side surfaces of the body624 extend in substantially co-planar relation to respective sidesurfaces of the package body 640.

Referring now to FIG. 12 , there is provided a flow chart which setsforth an exemplary method for fabricating the semiconductor device 600of the present invention shown in FIG. 6 . The method comprises thesteps of preparing the substrate (S1), preparing the semiconductor die(S2), forming conductive bumps on the semiconductor die (S3), attachingand electrically connecting the semiconductor die to the substrate (S4),forming TMV's on the substrate (S5), encapsulation to form a packagebody (S6), attaching an interposer to the TMV's (S7), and the connectionof solder balls to the substrate (S8). FIGS. 13A-13H provideillustrations corresponding to these particular steps, as will bediscussed in more detail below.

Referring now to FIG. 13A, in the initial step S1 of the fabricationprocess for the semiconductor device 600, the substrate 110 having theabove-described structural attributes is provided. As indicated above, asolder mask 115 may be coated on at least portions of the lands 113 andthe bottom surface of the insulating layer 114.

In the next step S2 of the fabrication process for the semiconductordevice 600, the semiconductor die 420 is prepared. More particularly, asshown in FIG. 13B, the semiconductor die 420 is formed to include theaforementioned bond pads 421 on the bottom surface thereof. As shown inFIG. 13B, the bond pads 421 are formed on the bottom surface of thesemiconductor die 420 so as to protrude therefrom. In this regard, thoseof ordinary skill in the art will recognize that the bond pads 421 mayalternatively be formed so as to be at least partially embedded in thesemiconductor die 420 and to extend in substantially flush relation tothe bottom surface thereof. Thereafter, as illustrated in FIG. 13C, stepS3 is completed wherein the conductive bumps 430 are electricallyconnected to respective ones of the bond pads 121.

Referring now to FIG. 13D, in the next step S4 of the fabricationprocess for the semiconductor device 600, the semiconductor die 420 iselectrically connected to the substrate 110. More particularly, theconductive bumps 430 electrically connected to the semiconductor die 420as described above in relation to step S3 are each electricallyconnected to the conductive pattern 112 of the substrate 110, and henceto the lands 113.

Referring now to FIG. 13E, in the next step S5 of the fabricationprocess for the semiconductor device 600, the TMV's 650 are formed onthe substrate 110. More particularly, as explained above, the formationof the TMV's 650 is facilitated by forming the aforementioned conductiveballs on respective peripheral portions of the conductive pattern 112 ofthe substrate 110. Thus, the TMV's 650 extend at least partially aboutthe periphery of the semiconductor die 420 in the manner shown in FIG.13E.

Referring now to FIG. 13F, in the next step S6 of the fabricationprocess for the semiconductor device 600, at least portions of thesemiconductor die 420, the conductive bumps 430, the TMV's 650, theconductive pattern 112 and the top surface of the insulating layer 114are each encapsulated or covered by an encapsulant material whichultimately hardens into the package body 640 of the semiconductor device600. As indicated above, the fully formed package body 640 preferablyincludes a generally planar top surface, and generally planar sidesurfaces which extend in generally flush or co-planar relation torespective side surfaces of the insulating layer 114 of the substrate110. As also indicated above, the package body 640 is formed such thatthe top surface of the semiconductor die 420 extends in substantiallyflush relation to the top surface of the package body, with the TMV's650 protruding slightly beyond the top surface of the package body 640.The encapsulation step S6 can be carried out by transfer molding using amold, dispensing molding using a dispenser, or through the use of theaforementioned mold film.

In the next step S7 of the fabrication process for the semiconductordevice 600 shown in FIG. 13G, the interposer 623 is electricallyconnected to the TMV's 650. More particularly, the second conductivepattern 623 b of the interposer 623 is electrically connected to theexposed portions of the TMV's 650 such that the aforementioned gap 615is defined between the bottom surface of the body 624 of the interposer623 and the top surface of the package body 640.

Referring now to FIG. 13H, in the next step S8 of the fabricationprocess for the semiconductor device 600, the solder balls 160 areelectrically connected to respective ones of the lands 113 of thesubstrate 110. As seen in FIG. 13H, the solder mask 115 may extend intocontact with the solder balls 160. The solder balls 160 may befabricated from the materials described above in relation thereto.

Referring now to FIG. 7 , there is shown a semiconductor device 700constructed in accordance with a seventh embodiment of the presentinvention. The semiconductor device 700 comprises the above-describedsubstrate 110. Additionally, in the semiconductor device 700, theabove-described solder balls 160 are formed on and electricallyconnected to respective ones of the lands 113 of the substrate 110.Further, the above-described solder mask 115 is preferably applied tothe bottom surface of the insulating layer 114 of the substrate 110, thesolder mask 115 being coated on at least portions of the lands 113 andextending into contact with portions of each of the solder balls 160.The semiconductor device 700 also includes a first (lower) semiconductordie 420 which is identical to the above-described semiconductor 420 ofthe semiconductor device 400, and is electrically connected to theconductive pattern 112 of the substrate 110 through the use of theconductive bumps 430 in the same manner described above in relation tothe semiconductor device 400.

In the semiconductor device 700, a plurality of conductive balls (whichultimately define lower through-mold vias or TMV's 650 as describedbelow) are electrically connected to a peripheral portion of the firstconductive pattern 112. The conductive balls used to define the TMV's650 are preferably fabricated from a conductive material selected fromcopper, aluminum, gold, silver, tin, lead, bismuth, soldering materialsor equivalents thereto.

The semiconductor device 700 further comprises a first (lower)interposer 723 which is disposed on and electrically connected to theconductive balls ultimately defining the TMV's 650. The first interposer723 includes an interposer body 724 having a first conductive pattern723 a formed within the top surface thereof, a second conductive pattern723 b formed therein, and a third conductive pattern 723 c which is alsoformed therein and electrically connects the first and second conductivepatterns 723 a, 723 b to each other. As seen in FIG. 7 , the first andsecond conductive patterns 723 a, 723 b are formed within the body 724of the first interposer 723 so as to extend along respective ones of aspaced, generally parallel pair of planes. On the other hand, the thirdconductive pattern 723 c is formed in a direction which extendsgenerally perpendicularly between the planes along which respective onesof the first and second conductive patterns 723 a, 723 b extend. In thesemiconductor device 700, the second conductive pattern 723 b of thefirst interposer 723 is electrically connected to the conductive ballsultimately defining the TMV's 650 in the manner shown in FIG. 7 .Additionally, the first interposer 723, and in particular a centralportion of the bottom surface of the body 724 thereof, is attached tothe top surface of the first semiconductor die through the use of anadhesive layer 415.

The semiconductor device 700 also includes a second (upper)semiconductor die 425 which is identical to the above-describedsemiconductor 425 of the semiconductor device 400, and is electricallyconnected to a central portion of the first conductive pattern 723 a ofthe first interposer 723 through the use of the conductive bumps 431 inthe same manner described above in relation to electrical connection ofthe second semiconductor die 425 of the semiconductor device 400 to thefirst conductive pattern 423 a of the interposer 423 thereof. In thesemiconductor device 700, a plurality of conductive balls (whichultimately define upper through-mold vias or TMV's 750 as describedbelow) are electrically connected to a peripheral portion of the firstconductive pattern 723 a of the first interposer 723. The conductiveballs used to define the TMV's 750 are also preferably fabricated from aconductive material selected from copper, aluminum, gold, silver, tin,lead, bismuth, soldering materials or equivalents thereto.

In the semiconductor device 700, at least portions of the first andsecond semiconductor dies 420, 425, the first interposer 723, theconductive bumps 430, the conductive balls ultimately defining the TMV's650, 750, the insulating layer 114 of the substrate 110, and theconductive pattern 112 are each encapsulated or covered by anencapsulant material which ultimately hardens into a package body 740 ofthe semiconductor device 700. The package body 740 may be fabricatedfrom the same materials described above in relation to the package body140 of the semiconductor device 100. The fully formed package body 740preferably includes a generally planar top surface, and generally planarside surfaces which extend in generally flush or co-planar relation torespective side surfaces of the insulating layer 114 of the substrate110. The generally planar top surface of the second semiconductor die425 is preferably exposed in and substantially flush with the topsurface of the package body 740.

In the semiconductor device 700, the TMVs 650 are defined by theencapsulation of the conductive balls electrically connected to andextending between the conductive pattern 112 of the substrate 110 andthe second conductive pattern 723 b of the interposer 723. Similarly,the upper TMVs 750 are defined by the partial encapsulation of theconductive balls electrically connected to the first conductive pattern723 a of the interposer 723 with the package body 740. Importantly, inthe semiconductor device 700, the package body 740 is formed in a mannerwherein portions of the conductive balls used to form the TMV's 750protrude from the top surface of the package body 740 in the mannershown in FIG. 7 . Thus, the height of each TMV 750 slightly exceeds theheight or thickness of the package body 740. As indicated above, eachTMV 650, 750 preferably comprises a respective one of the aforementionedconductive balls which are each electrically connected to a peripheralportion of the first interposer 723.

The semiconductor device 700 further comprises a second (upper)interposer 770 which is disposed on and electrically connected to theTMV's 750. The second interposer 770 includes an interposer body 774having a first conductive pattern 771 formed within the top surfacethereof, a second conductive pattern 772 formed therein, and a thirdconductive pattern 773 which is also formed therein and electricallyconnects the first and second conductive patterns 771, 772 to eachother. As seen in FIG. 7 , the first and second conductive patterns 771,772 are formed within the body 774 of the second interposer 770 so as toextend along respective ones of a spaced, generally parallel pair ofplanes. On the other hand, the third conductive pattern 773 is formed ina direction which extends generally perpendicularly between the planesalong which respective ones of the first and second conductive patterns771, 772 extend. In the semiconductor device 700, the second conductivepattern 772 of the second interposer 770 is electrically connected tothe exposed portions of the TMV's 750 in the manner shown in FIG. 7 .Due to those portions of the TMV's 750 to which the second interposer770 is electrically connected protruding above the top surface of thepackage body 740, a narrow space or gap 715 is defined between the topsurface of the package body 740 (as well as the top surface of thesecond semiconductor die 425) and the second interposer 770 (i.e., thebottom surface of the body 774). The formation of the gap 715 betweenthe package body 740 and the second interposer 770 enhances the abilityof the second semiconductor die 425 to dissipate heat outside of thesemiconductor device 700. Advantageously, the inclusion of the secondinterposer 770 in the semiconductor device 700 allows a wiring patternof the TMV's 750 to be selectively redistributed using the interposer770.

Referring now to FIG. 8 , there is shown a semiconductor device 800constructed in accordance with an eighth embodiment of the presentinvention. The semiconductor device 800 is substantially similar to theabove-described semiconductor device 700, with only the differencesbetween the semiconductor devices 800, 700 being described below.

One of the differences between the semiconductor devices 800, 700 liesin the omission of the above-described second interposer 770 in thesemiconductor device 800. Additionally, in the semiconductor device 800,the package body 740 described above in relation to the semiconductordevice 700 is substituted with the package body 840 which is formed tocompletely cover the top surface of the second semiconductor die 425.This is in contrast to the semiconductor device 700 wherein the topsurface of the second semiconductor die 425 is exposed in the topsurface of the package body 740.

Another distinction between the semiconductor devices 800, 700 lies inthe substitution of the above-described TMV's 750 of the semiconductordevice 700 with the TMV's 850 included in the semiconductor device 800.In this regard, each of the TMV's 850 bears substantial structuralsimilarity to the TMV's 550 described above in relation to thesemiconductor device 500. More particularly, as seen in FIG. 8 , eachTMV 850 includes a first region which is defined by a respective one ofa plurality of conductive balls 851 which are each electricallyconnected to a peripheral portion of the first conductive pattern 723 aof the interposer 723. In addition to the first region, each TMV 850includes a second region 852 which extends from the top surface of thepackage body 840 to a respective one of the conductive balls 851. Thesecond region 852 of each TMV 850 is identically configured to theabove-described TMV's 250, 350, 450, 550, and is preferably fabricatedusing the same process described above in relation to each TMV 150. Inthis regard, the second region 852 of each TMV 850 is defined by ametal-filled hole which is formed in the package body 840 to extend fromthe top surface thereof to a corresponding conductive ball 851 (i.e.,the first region of the same TMV 850). Thus, each TMV 850 (comprisingthe second region 852 and the first region or conductive ball 851)extends from the top surface of the package body 840 to (and inelectrical communication with) the first conductive pattern 723 a of theinterposer 723.

Referring now to FIG. 9 , there is shown a semiconductor device 900constructed in accordance with a ninth embodiment of the presentinvention. The semiconductor device 900 comprises the above-describedsubstrate 110. Additionally, in the semiconductor device 900, theabove-described solder balls 160 are formed on and electricallyconnected to respective ones of the lands 113 of the substrate 110.Further, the above-described solder mask 115 is preferably applied tothe bottom surface of the insulating layer 114 of the substrate 110, thesolder mask 115 being coated on at least portions of the lands 113 andextending into contact with portions of each of the solder balls 160.The semiconductor device 900 also includes a first (lower) semiconductordie 420 which is identical to the above-described semiconductor 420 ofthe semiconductor device 400, and is electrically connected to theconductive pattern 112 of the substrate 110 through the use of theconductive bumps 430 in the same manner described above in relation tothe semiconductor device 400.

The semiconductor device 900 further comprises a second (upper)semiconductor die 925. The second semiconductor die 925 defines opposed,generally planar top and bottom surfaces, and includes a plurality ofconductive terminals or bond pads 926 disposed on the top surfacethereof when viewed from the perspective shown in FIG. 9 . The bottomsurface of the second semiconductor die 925 is attached to the topsurface of the first semiconductor die 420 through the use of anintervening adhesive layer 415. The first and second semiconductor dies420, 925 are preferably sized relative to each other such that the sidesurfaces thereof extend in substantially flush relation to each otherwhen the first and second semiconductor dies 420, 925 are attached toeach other through the use of the adhesive layer 415. Formed on andelectrically connected to each of the bond pads 926 is a respective oneof a plurality of conductive bumps 931, each of which is preferablyfabricated from the same material used to facilitate the fabrication ofconductive bumps 430 used to electrically connect the firstsemiconductor die 420 to the conductive pattern 112 of the substrate110.

In the semiconductor device 900, at least portions of the first andsecond semiconductor dies 420, 925, the conductive bumps 430, 931, theinsulating layer 114 of the substrate 110 and the conductive pattern 112are each encapsulated or covered by an encapsulant material whichultimately hardens into a package body 940 of the semiconductor device900. The package body 940 may be fabricated from the same materialsdescribed above in relation to the package body 140 of the semiconductordevice 100. The fully formed package body 940 preferably includes agenerally planar top surface, and generally planar side surfaces whichextend in substantially flush or co-planar relation to respective sidesurfaces of the insulating layer 114 of the substrate 110. As seen inFIG. 9 , portions of each of the conductive bumps 931 preferablyprotrude from the top surface of the package body 940.

In the semiconductor device 900, the package body 940 preferablyincludes a plurality of through-mold vias (TMV's) 950 formed therein.Each TMV 950 preferably comprises a conductive ball which iselectrically connected to a peripheral portion of the conductive pattern112. The conductive balls used to define the TMV's 950 are preferablyfabricated from a conductive material selected from copper, aluminum,gold, silver, tin, lead, bismuth, soldering materials or equivalentsthereto. Importantly, in the semiconductor device 900, the package body940 is formed in a manner wherein portions of the conductive balls usedto form the TMV's 950 protrude from the top surface of the package body940 in the manner shown in FIG. 9 . Thus, the height of each TMV 950slightly exceeds the height or thickness of the package body 940.

The semiconductor device 900 further comprises an interposer 970 whichis disposed on and electrically connected to the conductive bumps 931and the TMV's 950. The interposer 970 includes an interposer body 974having a first conductive pattern 971 formed within the top surfacethereof, a second conductive pattern 972 formed therein, and a thirdconductive pattern 973 which is also formed therein and electricallyconnects the first and second conductive patterns 971, 972 to eachother. As seen in FIG. 9 , the first and second conductive patterns 971,972 are formed within the body 974 of the interposer 623 so as to extendalong respective ones of a spaced, generally parallel pair of planes. Onthe other hand, the third conductive pattern 973 is formed in adirection which extends generally perpendicularly between the planesalong which respective ones of the first and second conductive patterns971, 972 extend. In the semiconductor device 900, the second conductivepattern 972 of the interposer 970 is electrically connected to theexposed portions of the conductive bumps 931 and the TMV's 950 in themanner shown in FIG. 9 . However, no space or gap such as theaforementioned gaps 615, 715 is defined between the interposer 970 andthe top surface of the package body 940. Rather, the interposer 970, andin particular the bottom surface of the body 974 thereof, is in directcontact with the top surface of the package body 940. Advantageously,the inclusion of the interposer 970 in the semiconductor device 900allows a wiring pattern of the conductive bumps 931 and the TMV's 950 tobe selectively redistributed using the interposer 970. As is also seenin FIG. 9 , the interposer 970 is sized relative to the package body 940such that the side surfaces of the body 974 extend in substantiallyco-planar relation to respective side surfaces of the package body 940.

This disclosure provides exemplary embodiments of the present invention.The scope of the present invention is not limited by these exemplaryembodiments. Numerous variations, whether explicitly provided for by thespecification or implied by the specification, such as variations instructure, dimension, type of material and manufacturing process may beimplemented by one of skill in the art in view of this disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substratehaving a top major surface and a bottom major surface opposite to thetop major surface; an electrically conductive pattern adjoining the topmajor surface; conductive lands adjoining the bottom major surface andincluding a first conductive land, a second conductive land, a thirdconductive land, and a fourth conductive land; conductive vias withinthe substrate and connecting part of the electrically conductive patternto the conductive lands, the conductive vias including a firstconductive via having a first width in a cross-sectional view andconnected to the third conductive land; conductive bumps; a firstsemiconductor die mounted to the first conductive land and the secondconductive land with the conductive bumps; an electronic componentelectrically connected to the electrically conductive pattern of thesubstrate and mounted on the top major surface of the substrate; a firstpackage body encapsulating the first semiconductor die and comprising abottom exterior surface distal to the bottom major surface of thesubstrate; a second package body encapsulating the electronic component;a first electrically conductive path physically and electricallyconnected to the third conductive land and extending to the bottomexterior surface of the first package body having a second width in thecross-sectional view that is greater than the first width; and a secondelectrically conductive path physically and electrically connected tothe fourth conductive land and extending to the bottom exterior surfaceof the first package body, wherein: the first electrically conductivepath comprises a first outer surface exposed from the bottom exteriorsurface of the first package body and configured as a first externalelectrical interconnect structure; and the second electricallyconductive path comprises a second outer surface exposed from the bottomexterior surface of the first package body and configured as a secondexternal electrical interconnect structure.
 2. The semiconductor deviceof claim 1, wherein: the first conductive via is laterally offset withrespect to the first electrically conductive path in the cross-sectionalview; the electrically conductive pattern comprises portions thatlaterally overlap onto the top major surface of the substrate; the firstelectrically conductive path comprises a first conductive via; thesecond electrically conductive path comprises a second conductive via;and the first outer surface and the second outer surface are adapted forreceiving a conductive solder structure.
 3. The semiconductor device ofclaim 1, further comprising: a bond pad on the electronic component; anda conductive interconnect; wherein: the conductive interconnect directlyconnects the bond pad to the electrically conductive pattern; the secondpackage body encapsulates the conductive interconnect; the secondpackage body contacts the bond pad; the first electrically conductivepath comprises a first reflowed conductive ball; and the secondelectrically conductive path comprises a second reflowed conductiveball.
 4. The semiconductor device of claim 1, wherein: the firstsemiconductor die comprises a first side, a second side opposite to thefirst side, and a first bond pad over the first side; the conductivebumps comprise solder; a first conductive bump of the conductive bumpsdirectly mounts the first bond pad to the first conductive land; thefirst package body contacts portions of the first side and contacts thebottom major surface of the substrate; and the second package bodycontacts the top major surface of the substrate.
 5. The semiconductordevice of claim 1, further comprising: a third electrically conductivepath extending vertically from the top major surface of the substratetowards a top exterior surface of the second package body; and a fourthelectrically conductive path extending vertically from the top majorsurface of the substrate towards to the top exterior surface of thesecond package body, wherein: the electronic component is interposedbetween the third electrically conductive path and the fourthelectrically conductive path in a cross-sectional view.
 6. Thesemiconductor device of claim 5, wherein: the third electricallyconductive path comprises a third conductive via; the fourthelectrically conductive path comprises a fourth conductive via; thethird conductive via comprises a third outer surface exposed from thetop exterior surface of the second package body; the fourth conductivevia comprises a fourth outer surface exposed from the top exteriorsurface of the second package body; and the third outer surface and thefourth outer surface are adapted for receiving conductive solderstructures.
 7. The semiconductor device of claim 1, wherein: the firstsemiconductor die is electrically coupled to one or more of the firstelectrically conductive path and the second electrically conductivepath; and the electronic component comprises a second semiconductor die.8. A semiconductor device comprising: a substrate having a top majorsurface and a bottom major surface opposite to the top major surface; anelectrically conductive pattern on the top major surface; conductivelands on the bottom major surface including a first conductive land anda second conductive land; conductive vias within the substrateelectrically connecting portions of the electrically conductive patternto the conductive lands, the conductive vias including a firstconductive via connected to the first conductive land, wherein the firstconductive via comprises a first width in a cross-sectional view; asemiconductor component; first bond pads on the semiconductor component;conductive bumps directly connecting the first bond pads to theconductive lands other than the first conductive land and the secondconductive land; an electronic component mounted on the top majorsurface of the substrate; a second bond pad on the electronic component;a conductive interconnect directly connecting the second bond pad to theelectrically conductive pattern; a first package body portionencapsulating the semiconductor component, the conductive bumps, and atleast portions of the bottom major surface of the substrate andcomprising a bottom exterior surface distal to the bottom major surfaceof the substrate; a second package body portion encapsulating theconductive interconnect and the electronic component; a firstelectrically conductive path physically and electrically connected tothe first conductive land and comprising a first outer surface exposedfrom the bottom exterior surface wherein the first electricallyconductive path comprises a second width in the cross-sectional viewthat is greater than the first width; and a second electricallyconductive path physically and electrically connected to the secondconductive land and comprising a second outer surface exposed from thebottom exterior surface, wherein: the second package body portioncontacts the top major surface of the substrate; and the bottom exteriorsurface of the first package body portion is exposed outside of thesemiconductor device.
 9. The semiconductor device of claim 8, furthercomprising: a third electrically conductive path coupled to andextending vertically upwards from the top major surface of thesubstrate; and a fourth electrically conductive path coupled to andextending vertically upwards from the top major surface of thesubstrate; wherein: the second package body portion encapsulates atleast portions of the third electrically conductive path and at leastportions of the fourth electrically conductive path; the conductivebumps comprise solder; and the electronic component is interposedbetween the third electrically conductive path and the fourthelectrically conductive path.
 10. The semiconductor device of claim 9,wherein: one or more of the first electrically conductive path, thesecond electrically conductive path, the third electrically conductivepath, or the fourth electrically conductive path comprise a via filledwith a conductive material.
 11. The semiconductor device of claim 9,wherein: the third electrically conductive path comprises a third outersurface exposed from a top exterior surface of the second package bodyportion.
 12. The semiconductor device of claim 8, wherein: the firstconductive via is laterally offset with respect to the firstelectrically conductive path in the cross-sectional view; theelectrically conductive pattern comprises portions that laterallyoverlap onto the top major surface of the substrate; the first packagebody portion comprises a first thickness that defines the bottomexterior surface; and the semiconductor component, first electricallyconductive path and the second electrically conductive path are confinedwithin the first thickness.